BAT64-07E6327 Infineon Technologies Corporation, BAT64-07E6327 Datasheet

BAT64-07E6327

Manufacturer Part Number

BAT64-07E6327

Description

Silicon af Schottky Diode

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BAT64-07E6327.pdf (3 pages)

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Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,

• Integrated diffused guard ring

• Low forward voltage

ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!

Type

BAT 64-07

Maximum Ratings

Parameter

Diode reverse voltage

Forward current

Average forward current (50/60Hz, sinus)

Surge forward current (t < 10ms)

Total power dissipation, T

Junction temperature

Storage temperature

Maximum Ratings

Junction - ambient

Junction - soldering point

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu

bias isolation and clamping applications

Marking

67s

= 61 °C

1 = C1

Pin Configuration

2 = C2

Symbol

FAV

FSM

stg

tot

thJA

thJS

3 = A2

4 = A1

-55 ... 150

Value

≤ 495

≤ 355

250

120

800

250

150

EHA07008

Package

SOT-143

BAT 64-07

Oct-07-1999

VPS05178

Unit

°C

K/W

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BAT64-07E6327 Summary of contents

Page 1

Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Marking BAT 64-07 ...

Page 2

Electrical Characteristics at T Parameter DC characteristics Reverse current = Reverse current = 150 ° Forward voltage = ...

Page 3

Forward current Package mounted on epoxy BAT 64... 300 Ι 200 100 Forward current Parameter A BAT 64... ...

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