STP20NM65N STMicroelectronics, STP20NM65N Datasheet - Page 5

• Manufacturer Part Number: STP20NM65N
• Manufacturer: STMicroelectronics

STP20NM65N, STF20NM65N
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source drain current
Source drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 13845 Rev 2
I
I
V
I
V
(see
SD
SD
SD
DD
DD
= 15 A, V
= 15 A, di/dt = 100 A/µs
=15 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, Tj = 150 °C
Figure
Test conditions
17)
GS
= 0
Figure
17)
Min.
Electrical characteristics
-
-
-
-
Typ.
24.5
455
710
5.5
24
8
Max.
1.6
15
60
Unit
nC
nC
ns
ns
A
A
V
A
A
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