MD16R1624DF0 Samsung Semiconductor, Inc., MD16R1624DF0 Datasheet - Page 10

• Manufacturer Part Number: MD16R1624DF0
• Description: Description = MD16R1624(8/G)DF0, MD18R1624(8/G)DF0 (16Mx16)*4(8/16)pcs RIMM(TM) Module Based on 256Mb D-die, 32s Banks,16K/32ms Ref, 2.5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Component Composition = 256M(5th)x4 ;; Voltage(V) = 2.5 ;; Refr
• Manufacturer: Samsung Semiconductor, Inc.

MD16R1624(8/G)DF0 - CN1 for 1200MHz
MD18R1624(8/G)DF0 - CN1 for 1200MHz
32 bit RIMM Module Current Profile
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the follow-
ing: V
c. Current values represent X32(Non-Ecc) / X36(Ecc)
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
I
DD
DD
= 2.5V, V
One RDRAM device per channel in Read
balance in NAP mode
One RDRAM device per channel in Read
balance in Standby mode
One RDRAM device per channel in Read
balance in Active mode
One RDRAM device per channel in Write,
balance in NAP mode
One RDRAM device per channel in Write,
balance in Standby mode
One RDRAM device per channel in Write,
balance in Active mode
TERM
32 bit RIMM module power conditions
= 1.8V, V
Total 32 bit RIMM Module Capacity
R E F
= 1.4V and V
Table 7 : 32bit RIMM Module Current Profile
DIL
= V
b
b
b
,
,
,
REF
- 0.5V.
RIMM 4800
RIMM 4800
RIMM 4800
RIMM 4800
RIMM 4800
RIMM 4800
a
Page 9
512/576MB
1496/1536
2840/2880
3540/3580
1636/1676
2980/3020
3680/3720
Max
c
Version 1.0 January 2003
32 Bit RIMM
256/288MB
1464/1504
2040/2080
2340/2380
1604/1644
2180/2220
2480/2520
Max
128/144MB
1448/1488
1640/1680
1740/1780
1588/1628
1780/1820
1880/1920
Max
®
Module
Unit
mA
mA
mA
mA
mA
mA