MD16R1624DF0 Samsung Semiconductor, Inc., MD16R1624DF0 Datasheet - Page 9

• Manufacturer Part Number: MD16R1624DF0
• Description: Description = MD16R1624(8/G)DF0, MD18R1624(8/G)DF0 (16Mx16)*4(8/16)pcs RIMM(TM) Module Based on 256Mb D-die, 32s Banks,16K/32ms Ref, 2.5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Component Composition = 256M(5th)x4 ;; Voltage(V) = 2.5 ;; Refr
• Manufacturer: Samsung Semiconductor, Inc.

MD16R1624(8/G)DF0 - CN1 for 1200MHz
MD18R1624(8/G)DF0 - CN1 for 1200MHz
Absolute Maximum Ratings
DC Recommended Electrical Conditions
a. see Direct RDRAM datasheet for more details
32 bit RIMM Module Capacity and Number of RDRAM device
V
V
T
T
V
V
V
SVdd
V
V
Number of 256/288Mb RDRAM Devices
STORE
PLATE
I,ABS
DD,ABS
DD
CMOS
REF
TERM
TERM
Symbol
Symbol
V
REF
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
Voltage on VDD with respect to Gnd
Storage temperature
Plate temperature
Supply voltage
CMOS I/O power supply at pad for 2.5V controllers
CMOS I/O power supply at pad for 1.8V controllers
Reference voltage
Serial Presence Detector- positive power supply
Termination Voltage
Nominal RSL signal half swing
Table 6: 32 bit RIMM Module Capacity and Number of RDRAM device
a
a
Parameter and Conditions
Table 5 : DC Recommended Electrical Conditions
Table 4 : Absolute Maximum Ratings
Parameter
channel 1
channel 2
Page 8
512/576MB
16
8
8
256/288MB
Version 1.0 January 2003
8
4
4
2.50 - 0.13
1.8 - 0.09
32 Bit RIMM
1.8 - 0.1
1.4 - 0.2
- 0.3
- 0.5
Min
- 50
VDD
Min
-
2.2
-
128/144MB
V
V
DD
DD
Max
2.50 + 0.13
100
1.8 + 0.09
92
1.8 + 0.2
1.4 + 0.2
4
2
2
+ 0.3
+ 1.0
VDD
Max
0.46
3.6
®
Module
V
V
C
C
Unit
Unit
pcs
Unit
V
V
V
V
V
V
V