Si7450DP Vishay Intertechnology, Si7450DP Datasheet
Si7450DP
Manufacturer Part Number
Si7450DP
Description
N-channel 200-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7450DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7450DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7450DP-T1-GE3
Manufacturer:
NXP
Quantity:
1 316
Part Number:
Si7450DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71432
S-31728—Rev. C, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
200
200
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7450DP-T1
t A bi
7
D
6
D
J
J
a
a
PowerPAK SO-8
0.080 @ V
0.090 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
r
D
DS(on)
a
a
GS
GS
1
N-Channel 200-V (D-S) MOSFET
(W)
S
= 10 V
= 6 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
D
= 25_C
= 70_C
= 25_C
= 70_C
5.3
5.0
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
thJC
I
I
AS
I
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
Package with Low 1.07-mm Profile
N-Channel MOSFET
10 secs
Typical
5.3
4.3
4.3
5.2
3.3
1.5
19
52
g
G
Tested
-55 to 150
"20
200
40
15
Steady State
Maximum
D
S
Vishay Siliconix
3.2
2.6
1.6
1.9
1.2
1.8
24
65
Si7450DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1