C5584 Panasonic, C5584 Datasheet

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C5584

Manufacturer Part Number
C5584
Description
Search -----> 2SC5584
Manufacturer
Panasonic
Datasheet

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Quantity
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Part Number:
C5584
Manufacturer:
M
Quantity:
11
Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
■ Absolute Maximum Ratings T
Note) * : Non-repetitive peak collector current
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High breakdown voltage, and high reliability through the use of a
• High-speed switching
• Wide safe operation area
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
glass passivation layer
Parameter
Parameter
*
T
a
= 25°C
C
Symbol
V
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
I
I
T
CBO
CEO
EBO
C
CES
CP
I
I
B
C
stg
CE(sat)
BE(sat)
C
h
CBO
EBO
t
j
f
stg
t
FE
= 25°C
T
f
−55 to +150
Rating
V
V
V
V
I
I
V
I
I
1 500
1 500
C
C
C
B1
600
150
150
CE
3.5
CB
CB
EB
CE
20
30
= 10 A, I
= 10 A, I
= 10 A, Resistance loaded
7
8
= 2.5 A, I
SJD00160BED
= 10 V, I
= 7 V, I
= 5 V, I
= 1 000 V, I
= 1 500 V, I
B
B
C
C
B2
Conditions
= 2.5 A
= 2.5 A
C
Unit
= 0
= 10 A
°C
°C
W
V
V
V
V
A
A
A
= 0.1 A, f = 0.5 MHz
= −5.0 A
E
E
= 0
= 0
(1.5)
1
Min
20.0
10.9
7
2
±0.5
±0.5
3
www.DataSheet4U.com
5.45
Typ
1.0
2.0
3.0
3
±0.2
±0.3
±0.3
±0.3
φ 3.3
TOP-3L-A1 Package
±0.2
Max
1.5
2.7
0.2
50
50
14
1
3
1: Base
2: Collector
3: Emitter
0.6
(3.0)
5.0
(1.5)
2.7
Unit: mm
±0.2
±0.3
±0.3
MHz
Unit
mA
µA
µA
µs
µs
V
V
1

C5584 Summary of contents

Page 1

... Power Transistors 2SC5584 Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area ■ Absolute Maximum Ratings T ...

Page 2

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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