HY29LV400 Hynix Semiconductor, HY29LV400 Datasheet - Page 28

• Manufacturer Part Number: HY29LV400
• Description: 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
• Manufacturer: Hynix Semiconductor

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HY29LV400
AC CHARACTERISTICS
Program and Erase Operations
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
28
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programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V
command. See Table 6 for further information on command sequences.
programmed to 0x00 before erasure.
bytes/words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the
maximum byte/word program time specified is exceeded. See Write Operation Status section for additional information.
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