HY29LV400 Hynix Semiconductor, HY29LV400 Datasheet - Page 34

• Manufacturer Part Number: HY29LV400
• Description: 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
• Manufacturer: Hynix Semiconductor

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HY29LV400
34
AC CHARACTERISTICS
Addresses
Notes:
1.
2.
3.
4.
RESET#
RY/BY#
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write Opera-
tion Status section), D
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
Word mode addressing shown.
RESET# shown only to illustrate t
sequence.
W E #
Data
O E #
C E #
t
G H E L
t
t
W S
R H
0x555 for Program
Figure 26. Alternate CE# Controlled Write Operation Timings
0x2AA for Erase
t
t
OUT
D S
W C
0xA0 for Program
t
0x55 for Erase
C P
= array data read at VA.
RH
t
t
W H
C P H
t
measurement references. It cannot occur as shown during a valid command
0x555 for Chip Erase
D H
SA for Sector Erase
t
A S
PA for Program
0x30 for Sector Erase
0x10 for Chip Erase
PD for Program
t
A H
t
W H W H 1
t
B U S Y
or t
W H W H 2
or t
W H W H 3
Status
V A
D
O U T
Rev. 1.0/Nov. 01