BU508DF Philips Semiconductors (Acquired by NXP), BU508DF Datasheet
BU508DF
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BU508DF Summary of contents
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... 16kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508DF TYP. MAX. UNIT - 1500 V - 700 1 1.6 2 ...
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... 100 mA 4 CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508DF MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2.0 700 - - - - 1 1 1.6 2.0 TYP. MAX 125 - = ...
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... July 1998 ICsat t IBend t IBend -VBB t Fig.3. Switching times test circuit ICsat 100 0.1 - IBM Fig.4. Typical DC current gain Product specification BU508DF + 150 v nominal adjust for ICsat 1mH D.U.T. LB 12nF BU508AD parameter V CE Rev 1.200 ...
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... BU508AD PD% 120 110 100 Fig.8. Normalised power dissipation Product specification BU508DF BU508AD 4. IB/A V sat = parameter Normalised Power Derating with heatsink compound 100 120 140 Ths / C PD% = 100 P ...
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... VCE / V = 25˚ Product specification 0.01 ICM max IC max II Ptot max 100 VCE / V Region of permissible DC operation. Extension for repetitive pulse operation newton force on the centre of the envelope. BU508DF 100 1000 = 25˚C hs Rev 1.200 ...
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... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU508DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.200 o 45 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508DF Rev 1.200 ...