BU508DF Philips Semiconductors (Acquired by NXP), BU508DF Datasheet

no-image

BU508DF

Manufacturer Part Number
BU508DF
Description
BU508DF; Silicon Diffused Power Transistor;; Package: SOT199 (3-lead TO-247F)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
1
CONDITIONS
V
T
I
f = 16kHz
I
I
CONDITIONS
V
T
CONDITIONS
without heatsink compound
with heatsink compound
in free air
C
F
Csat
hs
hs
1
BE
BE
= 4.5 A
= 4.5 A; I
2
= 0 V
= 0 V
= 4.5 A; f = 16kHz
25 ˚C
3
25 ˚C
B
= 1.6 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
-65
4.5
1.6
0.7
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1500
1500
e
c
BU508DF
700
700
150
150
1.0
2.0
3.7
2.8
15
34
15
34
8
8
4
6
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
V
V
V
A
A
A
A
s

Related parts for BU508DF

BU508DF Summary of contents

Page 1

... 16kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508DF TYP. MAX. UNIT - 1500 V - 700 1 1.6 2 ...

Page 2

... 100 mA 4 CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508DF MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2.0 700 - - - - 1 1 1.6 2.0 TYP. MAX 125 - = ...

Page 3

... July 1998 ICsat t IBend t IBend -VBB t Fig.3. Switching times test circuit ICsat 100 0.1 - IBM Fig.4. Typical DC current gain Product specification BU508DF + 150 v nominal adjust for ICsat 1mH D.U.T. LB 12nF BU508AD parameter V CE Rev 1.200 ...

Page 4

... BU508AD PD% 120 110 100 Fig.8. Normalised power dissipation Product specification BU508DF BU508AD 4. IB/A V sat = parameter Normalised Power Derating with heatsink compound 100 120 140 Ths / C PD% = 100 P ...

Page 5

... VCE / V = 25˚ Product specification 0.01 ICM max IC max II Ptot max 100 VCE / V Region of permissible DC operation. Extension for repetitive pulse operation newton force on the centre of the envelope. BU508DF 100 1000 = 25˚C hs Rev 1.200 ...

Page 6

... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU508DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.200 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508DF Rev 1.200 ...

Related keywords