BU508DX Philips Semiconductors (Acquired by NXP), BU508DX Datasheet - Page 2

• Manufacturer Part Number: BU508DX
• Description: BU508DX; Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
July 1998
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
I
I
I
V
V
V
h
V
hs
SYMBOL
f
C
t
t
SYMBOL PARAMETER
CES
CES
EBO
T
s
f
FE
isol
CEOsust
CEsat
BEsat
F
isol
C
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
Collector cut-off current
Emitter cut off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages I
Base-emitter saturation voltage
DC current gain
Diode forward voltage
PARAMETER
Transition frequency at f = 5 MHz
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
1
CONDITIONS
R.H.
CONDITIONS
V
V
T
V
I
L = 25 mH
I
I
I
CONDITIONS
I
V
I
I
-I
B
C
C
C
F
C
Csat
B(end)
j
BM
BE
BE
EB
CB
= 0 A; I
= 4.5 A
= 4.5 A; I
= 4.5 A; I
= 100 mA; V
= 0.1 A;V
= 125 ˚C
65 % ; clean and dustfree
= 0 V; V
= 0 V; V
= 6.0 V; I
= 10 V
= 4.5 A;L
= 2.25 A
= 1.4 A; L
2
C
= 100 mA;
B
B
CE
CE
CE
= 1.6 A
= 1.6 A
C
c
= 5 V
= V
= V
1 mH;C
= 0 A
CE
B
= 6 H; -V
= 5 V
CESMmax
CESMmax
fb
= 4 nF
;
BB
= -4 V;
MIN.
MIN.
700
6
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
125
1.6
6.5
0.7
22
13
7
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
2500
BU508DX
1.0
2.0
1.0
1.3
2.0
10
30
-
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
MHz
mA
mA
mA
pF
pF
V
V
V
V
V
s
s