DA108S ST Microelectronics, Inc., DA108S Datasheet
DA108S
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DA108S Summary of contents
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... ARRAY diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. COMPLIES WITH FOLLOWING STANDARDS : IEC1000-4-22 level 4: 15kV (air discharge) 8kV (contact discharge) August 2001 - Ed:4 DIODE ARRAY SO-8 FUNCTIONAL DIAGRAM : DA108S1 I/O 4 ...
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... DA108S1 / DA112S1 ABSOLUTE MAXIMUM RATINGS (T Symbol V Repetitive peak reverse voltage (for one single diode) RRM I Repetitive peak forward current * PP Power dissipation P Tstg Storage temperature range Tj Maximum operating junction temperature T Maximum lead temperature for soldering during 10s The surge is repeated after the device returns to ambient temperature ...
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... DA108S1 / DA112S1 Fig.1 : Input capacitance V connected between REF1 and REF2 CC Input applied : DC bias + 950 mV REF2 I/O G REF1 Fig.2 : Typical peak forward voltage characteristics (8/20 s pulse) V (V) Typical values F 2.0 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0. (pF MHZ (RMS ...
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... DA108S1 / DA112S1 APPLICATION 1 : ISDN Interface Protection Residual lightning surges at transformer secondary are suppressed by DA108S1 APPLICATION 2 : Microcontroller I/O port protection I/O I/O Vcc I/O I/O IMPORTANT : DA108S1 must imperatively be connected to the reference voltages by REF1 and REF2. 4/5 Vcc 4-6 bit input port Vcc Vcc DA1x S1 x Vcc c ...
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... DA108S1 / DA112S1 ORDER CODE Diode Array Number of diodes MARKING : Logo, Data Code, DA108S1 DA108S DA112S1 DA112S PACKAGE MECHANICAL DATA SO-8 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...