IXFN-25N90 IXYS Corporation, IXFN-25N90 Datasheet - Page 4

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IXFN-25N90

Manufacturer Part Number
IXFN-25N90
Description
Hiperfettm Power Mosfets Ixfn 26n90 Single Die Mosfet Ixfn 25n90 N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr
Manufacturer
IXYS Corporation
Datasheet
© 2000 IXYS All rights reserved
15
12
50
45
40
35
30
25
20
15
10
5
0
9
6
3
0
0.100
0.010
0.001
0. 300
Capacitance Curves
0.0
Figure 7. Gate Charge
0
Figure 9. Forward Voltage Drop of the Intrinsic Diode
10
Figure 11. Transient Thermal Resistance
V DS = 500 V
-4
50
I D = 13 A
I G = 10 mA
0.3
100
T J = 125 o C
Gate Charge - nC
0.6
V
150
SD
- Volts
200
10
0.9
-3
T J = 25 o C
250
1.2
300
350
1.5
10
Pulse Width - Seconds
-2
10000
20000
1000
100
30
25
20
15
10
5
0
Figure10. Drain Current vs. Case Temperature
-50
0
10
Figure 8. Capacitance Curves
-1
-25
5
IXFN26N90
IXFN25N90
10
0
Case Temperatue -
25
15
V
Ciss
Coss
Crss
DS
- Volts
20
50
10
0
25
75
f = 1MHz
o
100
30
IXFN 25N90
IXFN 26N90
C
35
125
40
150
10
1
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