STB16NB25 ST Microelectronics, STB16NB25 Datasheet - Page 3

• Manufacturer Part Number: STB16NB25
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbo l
Symbo l
Symbo l
I
V
t
SDM
t
t
r (Voff)
SD
I
Q
Q
d(of f)
d(on)
RRM
I
Q
Q
t
SD
t
t
t
t
rr
gd
c
r
gs
f
f
g
rr
( )
( )
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay T ime
Fall T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, see fig. 3)
V
V
R
(Resistive Load, see fig. 3)
V
R
(Induct ive Load, see fig. 5)
I
I
V
(see test circuit, fig. 5)
SD
SD
DD
G
DD
DD
G
CLAMP
G
DD
= 4.7
= 4.7
= 4.7
= 16 A
= 16 A
= 125 V
= 125 V
= 200 V I
= 50 V
= 200 V
Test Con ditions
Test Con ditions
Test Con ditions
V
D
GS
= 16 A V
= 0
Thermal Impedance
di/dt = 100 A/ s
T
j
= 150
GS
V
V
V
GS
GS
GS
I
I
I
D
= 10 V
D
D
= 16 A
= 8 A
= 10 V
= 8 A
= 10 V
= 10 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
210
1.5
12
12
29
11
35
10
20
14
9
8
9
Max.
Max.
Max.
STB16NB25
1.5
38
16
64
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/8