2N6053 Motorola / Freescale Semiconductor, 2N6053 Datasheet - Page 5

• Manufacturer Part Number: 2N6053
• Description: Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=100
• Manufacturer: Motorola / Freescale Semiconductor

transistor:
Safe
that
must
The
There
operating
must
not
data
be subjected
are
be
average
of
wo
area curves
observed
Figures
VCE, COLLECTOR-EMITT~@Wdi;@$ (VOLTS)
limitations
junction
to grea~
,,.,
@
for
~.and
indicate”~~
-f,
~@~&~J~-~$Peration;
tems~ra~re
~@
FREQUENCY(kHz)
on
di~lpation
~~~~~,~r
based
MOTOROLA
-~VCE
,...
on TJ(Dk)
and
than
iiMitS
handling
second
tha curves
i.e.,
Of the
= 200°C;
FIGURE
the
breakdown.
ability
transistor
transistor
indicate.
T=
4 – THERMAL
Of a
is
variable
are valid
tures,
to
mav
(See
RESPONSE
0.05
values
300
200
0.1
ba calculated
AN-415).
0.1
1.0
thermal
depending
for
less than
0.2
!
I
1
dutv
limitations
2,0
!
,
1
— 2N6055, 2N6056, 2N6300, 2N6301(NPN)
VCE, COLLECTOR-EMITTERVOLTAGE (VOLTS)
cvcles
from
0.5
3.0
the
on
!
,
1
FIGURE
2N6053, 2N6054, 2N6298, 2N6299(PNP)
VR,
conditions.
tha
limitations
!
,
I
to
1.0
will
5.0 7.0
REVERSEVOLTAGE
I
r
1
data
IOY.
I
reducetha
1 1 I 1 1
8 – CAPACITANCE
2.0
I !11
provided
in Figure
!
10
imposed
Second
2N6299,2N6301
-. .----,
5.0
power
I
TJ(pk)
4.
20
(VOLTS)
breakdown
I
bv second
10
-------
At
that
high
30
=
1
20
200°C.
can
I
,
case tempera-
breakdown.
50
pulse
be handled
I \
50
70
TJ(pk)
Iv
limits
100
I
100