KSH13009W SHANTOU HUASHAN, KSH13009W Datasheet
KSH13009W
Manufacturer Part Number
KSH13009W
Description
NPN SILICON TRANSISTOR
Manufacturer
SHANTOU HUASHAN
Datasheet
1.KSH13009W.pdf
(3 pages)
www.DataSheet.in
█ ELECTRICAL CHARACTERISTICS（T
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
█ ABSOLUTE MAXIMUM RATINGS（T
H
H
V
V
V
V
V
T
T
P
V
V
V
I
I
BV
Symbol
C
B
C
FE（1）
FE（2）
stg
j
CE(sat)1
CE(sat)2
CE(sat)3
BE(sat)1
BE(sat)2
I
CBO
CEO
EBO
Cob
t
——Junction Temperature……………………………… 150℃
——Collector Current（DC）……………………………… 12A
——Base Current……………………………………………6A
t
——Collector Dissipation （ T
EBO
STG
f
ON
t
——Storage Temperature………………………… -55~150℃
CEO
T
F
——Collector-Emitter Voltage………………………… 400V
——Collector-Base Voltage…………………………… 700V
——Emitter-Base Voltage……………………………… 9V
High Speed Switching
Suitable for Switching Regulator and Montor Control
Shantou Huashan Electronic Devices Co.,Ltd.
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Characteristics
c
=25℃） …………………… 100W
a
400
a
Min
=25℃）
=25℃）
8
6
4
180
Typ
N P N S I L I C O N T R A N S I S T O R
Max
1.5
1.2
1.6
1.1
0.7
40
30
1
1
3
3
KSH13009W
TO-263（D2PAK）
Unit
MHz
μs
μs
μs
mA
pF
1―
2―Collector，C
3―Emitter, E
V
V
V
V
V
V
Base，B
I
V
V
V
I
I
I
I
I
V
V
C
C
C
C
C
C
CE
EB
CE
CE
CB
=10mA, I
=5A, I
=8A, I
=12A, I
=5A, I
=8A, I
I
V
B1
=10V
=9V, I
=5V, I
=5V, I
=10V,f=0.1MHz
CC
=1.6A,I
Test Conditions
=125V, I
B
B
B
B
,I
=1A
=1.6A
=1.6A
B
=1A
C
C
C
C
=3A
=0
=5A
=8A
=0.5A
B
=0
B2
=-1.6A
C
=8A,
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KSH13009W Summary of contents
Page 1
... Characteristics Min 400 KSH13009W TO-263（D2PAK） 1― Base，B 2―Collector，C 3―Emitter, E Typ Max Unit Test Conditions I ...
Page 2
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13009W ...
Page 3
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13009W ...