FS40SM-5 Mitsubishi Electric Semiconductor, FS40SM-5 Datasheet

no-image

FS40SM-5

Manufacturer Part Number
FS40SM-5
Description
HIGH-SPEED SWITCHING USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS40SM-5
Manufacturer:
MITSUBISHI
Quantity:
12 500
Part Number:
FS40SM-5A
Manufacturer:
MIT
Quantity:
5 000
Part Number:
FS40SM-5A
Manufacturer:
MOTOROLA
Quantity:
3 000
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
V
V
I
I
P
T
T
FS3SM-16A
¡V
¡r
¡I
Symbol
D
DM
DSS
GSS
D
ch
stg
DS (ON) (MAX) ................................................................
D ............................................................................................
DSS ................................................................................
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter
(Tc = 25 C)
V
V
Typical value
GS
DS
= 0V
= 0V
Conditions
800V
3.3
3A
OUTLINE DRAWING
MITSUBISHI Nch POWER MOSFET
q
5.45
1.0
2
HIGH-SPEED SWITCHING USE
15.9MAX.
q
FS3SM-16A
4
w r
e
w
3.2
e
TO-3P
5.45
r
–55 ~ +150
–55 ~ +150
Ratings
q GATE
w DRAIN
e SOURCE
r DRAIN
800
100
4.8
30
3
9
0.6
Dimensions in mm
4.5
4.4
2.8
1.5
Feb.1999
Unit
W
V
V
A
A
g
C
C

Related parts for FS40SM-5

FS40SM-5 Summary of contents

Page 1

FS3SM-16A ¡V DSS ................................................................................ ¡r DS (ON) (MAX) ................................................................ ¡I D ............................................................................................ APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS ( Symbol Parameter V ...

Page 2

ELECTRICAL CHARACTERISTICS (Tch = 25 C) Symbol Parameter V Drain-source breakdown voltage (BR) DSS V Gate-source breakdown voltage (BR) GSS I Gate-source leakage current GSS I Drain-source leakage current DSS V Gate-source threshold voltage GS (th) r Drain-source on-state resistance ...

Page 3

ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL 25°C C Pulse Test GATE-SOURCE VOLTAGE V (V) GS TRANSFER CHARACTERISTICS (TYPICAL ...

Page 4

GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 Tch = 25° 250V DS 8 400V 600V GATE CHARGE Q (nC) g ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) ...

Related keywords