2SC1252 Advanced Semiconductor, 2SC1252 Datasheet

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2SC1252

Manufacturer Part Number
2SC1252
Description
2SC1252
Manufacturer
Advanced Semiconductor
Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
DESCRIPTION:
The
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
FEATURES INCLUDE:
MAXIMUM RATINGS
CHARACTERISTICS
P
High Gain -17 dB Typ. @ 200 MHz
Low NF - 3.0 dB Typ. @ 200 MHz
Hermetic TO-39 Package
T
SYMBOL
V
V
T
DISS
I
STG
CB
CE
JC
C
BV
BV
J
NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC1252
I
I
C
G
h
NF
CBO
EBO
f
FE
OB
CBO
PE
CEO
t
5 W @ T
I
I
V
V
V
V
V
V
V
V
C
C
-65 to +200 °C
-65 to +200 °C
is a High Frequency
CE
EB
CE
CE
CE
CB
CE
CE
= 5.0 mA
= 100 A
= 2.0 V
= 30 V
= 10 V
= 15 V
= 15 V
= 15 V
= 15 V
= 15 V
35 °C/W
400 mA
45 V
25 V
C
= 25 °C
TEST CONDITIONS
T
C
= 25 °C
I
I
I
I
I
C
C
C
C
C
= 50 mA
= 30 mA
= 50 mA
= 15 mA
= 70 mA
Specifications are subject to change without notice.
f = 1.0 MHz
f = 200 MHz
f = 200 MHz
f = 200 MHz
MINIMUM
1200
1400
PACKAGE STYLE TO-39
25
45
20
15
TYPICAL
3.0
17
MAXIMUM
3 & 4 = Collector (Case)
1 = Emitter
100
500
200
3.0
4.0
2SC1252
2 = Base
UNITS
MHz
nA
nA
dB
dB
pF
---
REV. B
V
V
1/1

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