1SS305 Renesas Electronics Corporation., 1SS305 Datasheet

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1SS305

Manufacturer Part Number
1SS305
Description
Silicon Switching Diodes
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (T
FEATURES
• Low capacitance: C
• High speed switching: t
• Wide applications including switching, limitter, clipper.
Maximum Voltages and Currents (T
Maximum Temperatures
Thermal Resistance
Forward Voltage
Reverse Current
Capacitance
Reverse Recovery Time
Peak Reverse Voltage
DC Reverse Voltage
Peak Forward Current
Average Rectified Current
DC Forward Current
Junction Temperature
Storage Temperature Range
Junction to Ambient
CHARACTERISTICS
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
t
= 4.0 pF MAX.
rr
= 3.0 ns MAX.
A
SILICON EPITAXIAL DIODE
= 25°C)
HIGH SPEED SWITCHING
SYMBOL
V
V
V
A
C
I
t
F1
F2
F3
R
rr
t
R
= 25°C)
V
T
I
V
th(j-a)
I
T
DATA SHEET
FM
I
RM
stg
O
F
R
j
I
I
I
V
V
I
See Test Circuit.
F
F
F
F
R
R
= 10 mA
= 50 mA
= 100 mA
= 10 mA, V
= 100 V
= 0 V, f = 1.0 MHz
–55 to + 150
0.85
100
100
300
100
100
150
TEST CONDITIONS
R
= 6 V, R
°C/mW
mA
mA
mA
SILICON SWITCHING DIODE
°C
°C
V
V
L
= 100 Ω,
CONNECTION DIAGRAM (Top View)
PACKAGE DIMENSIONS (Unit: mm)
2
1
MIN.
Marking : A14
TYP.
720
850
950
2.0
2
1
1SS305
©
1.25 0.1
2.1 0.1
MAX.
1000
1200
850
1.0
4.0
3.0
3
UNIT
1. N.C.
2. Anode
3. Cathode
mV
mV
mV
µ A
pF
Marking
ns
3
1987

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1SS305 Summary of contents

Page 1

... 100 1.0 MHz 100 Ω mA See Test Circuit. 1SS305 PACKAGE DIMENSIONS (Unit: mm) 2.1 0.1 1.25 0 Marking CONNECTION DIAGRAM (Top View N. Anode 3. Cathode Marking : A14 MIN. TYP. MAX. UNIT 720 ...

Page 2

... Forward Current - 25°C) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 0.0002 0.0001 0.8 1.0 1 3.0 2.0 1 100 1 2 Data Sheet D16310EJ2V0DS 1SS305 REVERSE CURRENT vs. REVERSE VOLTAGE Reverse Voltage - V R TERMINAL CAPACITANCE vs. REVERSE VOLTAGE f = 1.0 MHz T = 25˚ Reverse Voltage - V R ...

Page 3

... SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery time : t rr Trigger 0.02 F D.U.T. Sampling Pulse Oscilloscope Generator (50 ( Source mA 0.1 I • Input Voltage Waveform to Diode 6 100 R L Data Sheet D16310EJ2V0DS 1SS305 Output Current Waveform in Diode 0.1 I • ...

Page 4

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 1SS305 The M8E 00. 4 ...

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