IRFH5300PBF International Rectifier, IRFH5300PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5300PBF
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

Fig 7. Typical Source-Drain Diode Forward Voltage
4
350
300
250
200
150
100
1000
50
100
0.1
0
10
1
25
0.2
Fig 9. Maximum Drain Current Vs.
0.001
0.01
0.1
1
1E-006
Case (Bottom) Temperature
T J = 150°C
50
0.4
V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T C , Case Temperature (°C)
D = 0.50
0.6
0.20
0.10
0.05
0.02
0.01
75
LIMITED BY PACKAGE
T J = 25°C
0.8
100
SINGLE PULSE
( THERMAL RESPONSE )
1.0
1E-005
125
1.2
V GS = 0V
150
1.4
175
t 1 , Rectangular Pulse Duration (sec)
1.6
0.0001
0.001
Fig 10. Threshold Voltage Vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75 -50 -25
1
Fig 8. Maximum Safe Operating Area
0.1
OPERATION IN THIS AREA LIMITED BY R DS (on)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Tc = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
0.01
0
1
25
50
10msec
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75
10
I D = 1.0A
I D = 1.0mA
I D = 500μA
I D = 150μA
1msec
100 125 150 175
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0.1
100μsec
100