IRFH5301PBF International Rectifier, IRFH5301PBF Datasheet - Page 3

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IRFH5301PBF

Manufacturer Part Number
IRFH5301PBF
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.irf.com
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
100000
10000
Fig 3. Typical Transfer Characteristics
1000
1000
1000
100
Fig 1. Typical Output Characteristics
100
100
0.1
0.1
10
10
1
1
1.5
0.1
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5
1
C oss
C iss
C rss
2.5V
≤ 60µs
Tj = 25°C
3
f = 1 MHZ
V DS = 15V
≤60µs PULSE WIDTH
10
T J = 25°C
PULSE WIDTH
3.5
10
TOP
BOTTOM
4
4.5
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
100
100
5
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
1000
100
Fig 4. Normalized On-Resistance Vs. Temperature
14
12
10
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
6
4
2
0
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
Fig 2. Typical Output Characteristics
I D = 50A
I D = 50A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
V DS = 24V
V DS = 15V
1
2.5V
≤ 60µs
Tj = 150°C
40
PULSE WIDTH
60
10
TOP
BOTTOM
80
www.DataSheet4U.com
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
100
100
3

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