IRFS4310 IRF, IRFS4310 Datasheet - Page 4

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IRFS4310

Manufacturer Part Number
IRFS4310
Description
Power MOSFET
Manufacturer
IRF
Datasheet

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4
1000.0
140
120
100
100.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
10.0
0
1.0
0.1
Fig 11. Typical C
25
0
0.2
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0.4
50
20
T J = 175°C
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
0.6
Case Temperature
Forward Voltage
75
40
0.8
LIMITED BY PACKAGE
T J = 25°C
OSS
1.0
100
60
Stored Energy
1.2
125
1.4
80
V GS = 0V
1.6
150
100
1.8
175
2.0
120
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
2400
2000
1600
1200
120
115
110
105
100
800
400
100
0.1
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
100
TOP
BOTTOM
100
125
100µsec
1msec
10msec
DC
12A
75A
17A
150
I D
www.irf.com
1000
175

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