TP0610T Supertex Inc, TP0610T Datasheet - Page 2

• Manufacturer Part Number: TP0610T
• Description: P-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: Supertex Inc

Thermal Characteristics
*
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
I
Package
SOT-23
D
OUTPUT
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
GS(th)
SD
DS(ON)
ISS
OSS
RSS
INPUT
FS
DSS
GS(th)
DS(ON)
-10V
V
0V
0V
DD
Static Drain-to-Source
ON-State Resistance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
I
D
(continuous)*
10%
-120mA
t
d(ON)
t
(ON)
GS(th)
DS(ON)
j
.
Parameter
t
10%
r
with Temperature
with Temperature
90%
90%
I
D
-400mA
t
d(OFF)
(pulsed)
t
90%
(OFF)
(@ 25°C unless otherwise specified)
10%
t
F
Min
Power Dissipation
-1.0
-60
-50
60
@ T
2
0.36W
A
Typ
400
= 25
°
C
GENERATOR
Max
-200
-2.4
-2.0
±10
6.5
1.0
25
10
60
30
10
10
15
15
20
-1
PULSE
R
INPUT
gen
°
mV/°C
200
C/W
%/°C
θ
Unit
m
mA
nA
µA
µA
pF
ns
ns
jc
Ω
Ω
V
V
V
V
f = 1 MHz
V
I
R
V
V
V
V
V
V
T
V
V
V
V
V
V
V
°
D
350
C/W
GS
GS
GS
GS
GS
GS
A
GS
GS
GS
GS
DS
GS
DD
GEN
GS
GS
θ
= -0.18A
ja
= 125°C
= -10V, I
= -10V, I
= 0V, V
= -25V
= 0V, I
= V
= ±20V, V
= 0V, V
= 0V, V
= -4.5V, V
= -4.5V, I
= -10V, I
= 0V, I
= 0V, I
= V
= 25Ω
DS
DS,
Conditions
, I
-120mA
D
SD
SD
I
DS
D
DS
DS
D
I
= -10µA
D
DR
D
D
D
= -1.0mA
= -1.0mA
= -0.12A
= -0.4A
V
DS
DS
= Max Rating
= 0.8 Max Rating
= -0.2A
= -0.1A
= -25V
= -0.2A
*
DD
= -25mA
= 0V
= -10V
R
L
D.U.T.
-400mA
OUTPUT
TP0610T
I
DRM