TP0610T Supertex Inc, TP0610T Datasheet
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TP0610T
Manufacturer Part Number
TP0610T
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Company:
Part Number:
TP0610T-T1
Manufacturer:
SAMSUNG
Quantity:
1
Part Number:
TP0610T-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Ordering Information
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
BV
-60V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
10Ω
DS(ON)
-50mA
(min)
I
D(ON)
P-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
BV
300°C
± 20V
Order Number/Package
DGS
DSS
TO-236AB*
1
TP0610T
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Note: See Package Outline section for dimensions.
Gate
TO-236AB
where ❋ = 2-week alpha date code
(SOT-23)
top view
Drain
Product marking for SOT-23:
Source
T50❋
TP0610T