TP0610T Supertex Inc, TP0610T Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
TP0610T
Manufacturer Part Number
TP0610T
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0610T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Company:
Part Number:
TP0610T-T1
Manufacturer:
SAMSUNG
Quantity:
1
Part Number:
TP0610T-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
TP0610T-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Notes:
Switching Waveforms and Test Circuit
∆R
† I
1. All D.C. parameters 100% tested at 25
2. All A.C. parameters sample tested.
∆V
R
BV
V
t
Sym
I
C
C
t
C
G
d(OFF)
TO-236AB (SOT-23)
I
I
D(ON)
V
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
D
GS(th)
OSS
RSS
t
t
ISS
SD
rr
FS
DSS
r
f
(continuous) is limited by max rated T
Package
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
OUTPUT
INPUT
-10V
V
0V
0V
DD
10%
GS(th)
DS(ON)
with temperature
(continuous)
with temperature
t
d(ON)
10%
t
(ON)
-120
(mA)
I
O
D
j
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
t
.
r
(T
90%
A
= 25°C unless otherwise specifi ed)
†
(pulsed)
90%
t
d(OFF)
-400
(mA)
t
90%
(OFF)
I
D
t
F
10%
Power Dissipation
Min
-1.0
-60
-50
60
@ T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
0.36
A
(W)
= 25
Typ
400
O
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
GENERATOR
PULSE
Max
-200
-2.4
±10
-1.0
-2.0
6.5
1.0
25
10
60
30
10
10
15
15
20
R
INPUT
-
-
-
-
GEN
O
200
C/W
θ
jc
mV/
mmho
Units
%/
mA
nA
μA
pF
ns
ns
Ω
V
V
V
O
O
C
C
O
350
C/W
θ
j
Conditions
a
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
I
R
V
V
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= -180mA,
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8 Max Rating,
= 0V, T
= -4.5V, V
= -4.5V, I
= -10V, I
= -10V, I
= -10V, I
= 0V,
= -25V,
= -25V,
= 0V, I
= 0V, I
= 25Ω
V
R
DS
DS
DD
L
-120
(mA)
, I
, I
I
DR
D
SD
SD
A
Output
D.U.T.
D
D
DS
= -10μA
†
= -1.0mA
= -1.0mA
= 125°C
D
D
D
= -120mA
= -400mA
D
= Max Rating
TP0610T
DS
= -200mA
= -200mA
= -100mA
DS
= -25mA
= -10V
= 0V
-400
(mA)
I
DRM