2SK655 Panasonic Semiconductor, 2SK655 Datasheet
2SK655
Manufacturer Part Number
2SK655
Description
For Switching
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK655.pdf
(3 pages)
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Part Number:
2SK655
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Part Number:
2SK655
Manufacturer:
PANASONIC
Quantity:
18 566
Company:
Part Number:
2SK655
Manufacturer:
PANASONIC
Quantity:
18 566
Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Allowing to supply with the radial taping
I Absolute Maximum Ratings
I Electrical Characteristics
*
V
GS
t
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
on
= 5V
, t
50Ω
off
measurement circuit
Parameter
Parameter
V
out
200Ω
V
DD
= 5V
V
V
I
I
P
T
T
I
I
V
V
R
| Y
C
C
C
t
t
Symbol
Symbol
on
off
D
DP
DSS
GSS
(Ta = 25°C)
D
ch
stg
DS(on)
iss
oss
rss
DS
GSO
DSS
th
*
fs
*
|
(Ta = 25°C)
V
V
out
in
V
V
I
I
I
I
V
V
V
−55 to +150
D
D
D
D
DS
GS
DS
DD
DD
Ratings
= 100µA, V
= 100µA, V
= 20mA, V
= 20mA, V
= 10V, V
= 8V, V
= 5V, V
= 5V, V
= 5V, V
100
200
200
150
50
8
Note) The part number in the parenthesis shows conventional part number.
t
on
10%
Conditions
GS
GS
DS
GS
GS
GS
DS
GS
DS
= 0 to 5V, R
= 5 to 0V, R
= 0
= 0, f = 1MHz
t
off
= 0
= 5V
= 5V, f = 1kHz
= 0
= V
90%
Unit
mW
mA
mA
°C
°C
V
V
10%
90%
GS
L
L
= 200Ω
= 200Ω
Internal Connection
min
1.5
50
20
G
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
4.0
typ
0.5
35
10
10
20
4
2
±0.2
3
2.0
max
3.5
10
50
50
15
5
1
±0.2
NS-B1 Package
S
0.7
0.45
1: Source
2: Drain
3: Gate
±0.1
unit: mm
D
+0.20
–0.10
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
283
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2SK655 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Allowing to supply with the radial taping I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current I DP Allowable power dissipation ...
Page 2
Silicon MOS FETs (Small Signal) 240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚C ) iss oss ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...