2SK662 Panasonic Semiconductor, 2SK662 Datasheet - Page 2

• Manufacturer Part Number: 2SK662
• Description: Silicon N-Channel Junction FET
• Manufacturer: Panasonic Semiconductor

Silicon Junction FETs (Small Signal)
252
240
200
160
120
80
40
20
16
12
– 0.8
0
8
4
0
5
4
3
2
1
0
0
1
Gate to source voltage V
Drain to source voltage V
V
Ta=25˚C
Ambient temperature Ta ( ˚C )
DS
20
=10V
– 0.6
40
3
C
g
rss
P
I
DSS
m
60
D
=5mA
 V
 Ta
– 0.4
 V
80
10
100
GS
DS
2mA
– 0.2
120
30
V
f=1MHz
Ta=25˚C
GS
DS
GS
140
=3V
( V )
( V )
160
100
0
20
16
12
12
10
8
4
0
8
7
6
5
4
3
2
1
0
8
6
4
2
0
10
0
0
Drain to source voltage V
1
2mA
Drain current I
2
10
Frequency f ( Hz )
2
2
I
1kΩ
R
g
D
4
NF  f
g
m
=500Ω
3
 V
 I
I
10
DSS
6
4
3
=5mA
DS
D
5
D
8
( mA )
10
V
6
GS
V
I
Ta=25˚C
– 0.1V
– 0.2V
– 0.3V
– 0.4V
V
Ta=25˚C
Ta=25˚C
D
4
DS
DS
DS
10
=5.2mA
=0V
=10V
=10V
7
( V )
10
12
8
5
9.6
8.0
6.4
4.8
3.2
1.6
10
0
–1.0
8
6
4
2
0
Gate to source voltage V
1
Drain to source voltage V
C
– 0.8
i s s
3
, C
I
D
– 0.6
25˚C
 V
o s s
Ta=75˚C
10
– 0.4
 V
2SK0662
GS
–25˚C
30
V
– 0.2
V
f=1MHz
Ta=25˚C
C
C
DS
GS
DS
D S
GS
iss
oss
=10V
=–3V
( V )
( V )
100
0