2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 3
2SK1159
Manufacturer Part Number
2SK1159
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet
1.2SK1159.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1159
Manufacturer:
HITACHI
Quantity:
5 000
Company:
Part Number:
2SK1159
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static Drain to source 2SK1159 R
on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode forward
voltage
Note:
1. Pulse test
2SK1159 V
2SK1160
2SK1159 I
2SK1160
2SK1160
Symbol Min
V
I
V
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
450
500
—
—
2.0
—
—
4.5
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
0.55
0.60
7.5
1150
340
55
17
55
100
45
0.9
350
Max
—
—
250
3.0
0.7
0.8
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
2SK1159, 2SK1160
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 8 A, V
= 8 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
/dt = 100 A/ s
= 7.5
= 360 V, V
= 400 V, V
= 10 V, V
= 25 V, V
GS
GS
GS
DS
GS
DS
= 0
= 0,
= 10 V *
= 10 V *
= 10 V,
GS
GS
DS
GS
GS
= 10 V
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3