2SK1772 Hitachi Semiconductor, 2SK1772 Datasheet

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2SK1772

Manufacturer Part Number
2SK1772
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1772
Manufacturer:
NEC
Quantity:
20 000
Part Number:
2SK1772HYTR-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
4 V gate drive device - - - can be driven from 5 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Silicon N-Channel MOS FET
UPAK
G
2SK1772
S
D
3
2 1
1. Gate
2. Drain
3. Source
4. Drain
4

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2SK1772 Summary of contents

Page 1

... Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline 2SK1772 UPAK Gate G 2. Drain 3 ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the alumina ceramic board (12.5 3. Marking is " ...

Page 3

... V — 1.2 — — 30 — rr 2SK1772 Unit Test Conditions mA 100 mA ...

Page 4

... Power vs. Temparature Derating 2.0 1.5 1.0 0 100 Ambient Temperature Typical Output Characteristics 2.0 3 1.6 1.2 0.8 0 Drain to Source Voltage 0.3 0.1 0.03 0.01 0.1 150 200 Ta (°C) 1.0 0.8 Pulse test 0.6 3.0 V 0.4 2 (V) DS Maximum Safe Operation Area Operation in this area is limited by R DS(on 100 µ ...

Page 5

... Resistance vs. Drain Current 10 Pulse test Pulse test 0.5 0.2 0.1 0.05 0 (V) GS Forward Transfer Admittance vs. 5.0 2 0 0.1 0.05 0.02 0.05 0.1 120 160 Drain Current 2SK1772 0.2 0 Drain Current I (A) D Drain Current –25° 25°C 75° Pulse test 0.2 0.5 1.0 2 ...

Page 6

... Body-Drain Diode Reverse Recovery Time 500 di/ A/µ 200 Ta = 25°C 100 0.02 0.05 0.1 0.2 Reverse Drain Current Dynamic Input Characteristics 10V 0.8 1.6 2.4 Gate Charge Qg 6 1000 100 10 1 0.5 1.0 2.0 0 ...

Page 7

... Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse test 1 1.2 0.8 0, –5 V 0.4 0 0.4 0.8 1.2 Source to Drain Voltage 2SK1772 1.6 2 ...

Page 8

Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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