2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet

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2SK2926

Manufacturer Part Number
2SK2926
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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2SK2926(L), (S)
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2SK2926L
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Features
Outline
Low on-resistance
R
4V gate drive devices.
High speed switching
DS(on)
= 0.042 typ.
2SK2926(L), 2SK2926(S)
DPAK–2
Silicon N Channel MOS FET
High Speed Power Switching
G
D
S
1 2
3
4
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
4
ADE-208-535
1st. Edition

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2SK2926 Summary of contents

Page 1

... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance R = 0.042 typ. DS(on) 4V gate drive devices. High speed switching Outline DPAK– Gate 2. Drain Source Drain ADE-208-535 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value ...

Page 3

... DF — 55 — 2SK2926(L), 2SK2926(S) Unit Test Conditions 10mA 100 16V 1mA ...

Page 4

... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics Pulse Test Drain to Source Voltage 4 1000 300 100 0.3 0.1 150 200 0 3 ...

Page 5

... Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test – Case Temperature Tc 2SK2926(L), 2SK2926(S) Static Drain to Source on State Resistance 1.0 0.5 0 (V) GS Forward Transfer Admittance vs ...

Page 6

... Body to Drain Diode Reverse Recovery Time 500 200 100 0.1 0.2 0 Reverse Drain Current Dynamic Input Characteristics 100 I = 15A Gate Charge 6 2000 1000 ...

Page 7

... Pulse Test 0 1.6 2.0 25 Channel Temperature Tch ( Monitor 2SK2926(L), 2SK2926( duty < > 100 125 Avalanche Waveform V DSS • L • I • – DSS ...

Page 8

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T. Vin – c( (t) • ch – C/ Pulse Width PW (S) Switching Time Waveform Vout Monitor R L 10% Vin V DD Vout ...

Page 9

... Package Dimensions 6.5 0.5 5.4 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 0.55 0.1 type L 2.3 0.2 0.55 0.1 6.5 0.5 5.4 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 typ S type 2SK2926(L), 2SK2926(S) Unit: mm 2.3 0.5 0.55 0 0.25 0.55 0.1 Hitachi DPAK–2 EIAJ ( L type) SC–63 SC–64 EIAJ ( S type) JEDEC — 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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