SI4464DY Vishay, SI4464DY Datasheet - Page 3

• Manufacturer Part Number: SI4464DY
• Description: N-Channel 200-V (D-S) MOSFET
• Manufacturer: Vishay

www.DataSheet.co.kr
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.3
0.2
0.1
0.0
0.1
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 2.2 A
On-Resistance vs. Drain Current
= 100 V
0.2
V
SD
2
3
Q
T
V
g
J
- Source-to-Drain Voltage (V)
GS
I
D
- Total Gate Charge (nC)
= 150_C
= 6 V
- Drain Current (A)
Gate Charge
0.4
4
6
0.6
V
GS
6
9
T
0.8
J
= 10 V
= 25_C
12
1.0
8
New Product
800
600
400
200
0.5
0.4
0.3
0.2
0.1
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 2.2 A
C
= 10 V
rss
2
T
V
V
20
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
40
50
C
oss
iss
I
D
6
75
= 2.2 A
Si4464DY
100
60
www.vishay.com
8
125
150
10
80
3
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