IRL540NS IRF, IRL540NS Datasheet

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IRL540NS

Manufacturer Part Number
IRL540NS
Description
HEXFET Power MOSFET
Manufacturer
IRF
Datasheets

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
D
GS
AS
AR
Pak is suitable for high current applications because of
@ T
@ T
JC
JA
Advanced Process Technology
Surface Mount (IRL540NS)
Low-profile through-hole (IRL540NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
@T
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ 10V
@ 10V
This
G
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
D P ak
2
-55 to + 175
IRL540NS/L
S
D
Max.
0.91
140
120
± 16
310
3.8
5.0
36
26
18
14
®
R
DS(on)
Power MOSFET
V
T O -26 2
Max.
DSS
1.1
40
I
D
= 36A
= 0.044
= 100V
PD -91535
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
5/13/98

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