MRF5811LT1 Motorola, MRF5811LT1 Datasheet - Page 2

• Manufacturer Part Number: MRF5811LT1
• Description: NPN Silicon High Frequency Transistor
• Manufacturer: Motorola

NOTES:
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
MRF5811LT1
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain (1)
Collector–Base Capacitance
Collector–Base Capacitance
Current–Gain Bandwidth Product (2)
Noise Figure (Minimum), Figure 3
Noise Figure (50 Ohm Insertion)
Power Gain at Optimum Noise Figure, Figure 3
Insertion Gain
Maximum Unilateral Gain (2)
2
1. 300 s pulse on Tektronix 576 or equivalent.
2. G Umax =
(I C = 5.0 mAdc, I B = 0)
(I C = 1.0 mAdc, I E = 0)
(I E = 0.1 mAdc, I C = 0)
(V EB = 2.0 Vdc, V BE = 0)
(V CB = 15 Vdc, I E = 0)
(I C = 50 mAdc, V CE = 5.0 Vdc)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(I C = 75 mAdc, V CE = 10 Vdc, f = 1.0 GHz)
(I C = 50 mAdc, V CE = 10 Vdc, f = 500 MHz)
(I C = 50 mAdc, V CE = 10 Vdc, f = 500 MHz)
(I C = 50 mAdc, V CE = 10 Vdc, f = 500 MHz)
(I C = 50 mAdc, V CE = 6.0 Vdc, f = 500 MHz)
(I C = 50 mAdc, V CE = 6.0 Vdc, f = 500 MHz)
(1 – |S 11 | 2 )(1 – |S 22 | 2 )
|S 21 | 2
Characteristic
(T C = 25 C unless otherwise noted)
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
G U max
NF 50
NF min
|S 21 | 2
I EBO
I CBO
G NF
h FE
C ob
C cb
f T
Min
2.5
18
36
50
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MOTOROLA RF DEVICE DATA
18.4
14.2
Typ
2.0
1.2
5.0
2.0
2.5
18
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Max
100
100
200
2.0
3.0
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Unit
GHz
Vdc
Vdc
Vdc
dB
dB
dB
dB
dB
Adc
Adc
pF
pF
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