MRF5811LT1 Motorola, MRF5811LT1 Datasheet - Page 4

• Manufacturer Part Number: MRF5811LT1
• Description: NPN Silicon High Frequency Transistor
• Manufacturer: Motorola

MRF5811LT1
4
26
24
22
16
20
18
14
12
10
MAG — Maximum Available Gain versus Frequency
V CE (Vdc)
0
8
6
4
2
0.1
6.0
Figure 6. MSG — Maximum Stable Gain,
0.2
0.3
I C (mA)
f, FREQUENCY (GHz)
10
50
0.5
0.7
20
18
16
14
12
10
8
0
Table 1. Common Emitter Noise Parameters
1
Figure 8. Noise Figure and Gain @ Minimum
f (MHz)
1000
1000
10
500
500
Noise Figure versus Collector Current
V CE = 6 Vdc
I C = 50 mA
20
MSG
MAG
2
I C , COLLECTOR CURRENT (mA)
30
3
NF min (dB)
G NF
40
1.64
2.81
2.85
2.0
50
NF
26
24
22
20
18
16
14
12
10
8
6
4
2
0
60
0.1
Figure 7. Minimum Noise Figure and Gain @
V CE = 6 Vdc
f = 500 MHz
Minimum Noise Figure versus Frequency
70
S = OPTIMUM
|Gam Opt|
80
0.49
0.68
0.51
0.61
0.2
90
0.3
f, FREQUENCY (GHz)
100
3
2.5
2
1.5
1
NF min
0.5
MOTOROLA RF DEVICE DATA
< Gam Opt
0.7
–164
–173
–177
–168
G NF
1
V CE = 6 Vdc
I C = 50 mA
2
3.5
3.5
3.9
4.7
Rn
3
4
3
2
1