RF5117 RF Micro Devices, RF5117 Datasheet

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RF5117

Manufacturer Part Number
RF5117
Description
3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF5117 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117 is designed to maintain linearity
over a wide range of supply voltage and power output.
Optimum Technology Matching® Applied
Rev A7 041007
Typical Applications
• IEEE802.11B WLAN Applications
• IEEE802.11G WLAN Applications
• 2.5GHz ISM Band Applications
Si BJT
Si Bi-CMOS
InGaP/HBT
BIAS GND1
PWR SEN
PWR REF
RF IN
Functional Block Diagram
1
2
3
4
GaAs HBT
SiGe HBT
GaN HEMT
16
5
Bias
15
6
0
14
7
13
8
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
12
11
10
9
RF OUT
RF OUT
RF OUT
NC
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 26dB Small Signal Gain
• High Linearity
• 1800MHz to 2800MHz Frequency Range
• +17dBm P
RF5117
RF5117 PCBA
Package Style: QFN, 16-Pin, 3x3
0.15 C B
Shaded lead is pin 1.
2 PLCS
0.15 C A
-A-
2 PLCS
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
Fully Assembled Evaluation Board
O
3.00 SQ.
2.75 SQ.
, 11G, <3% EVM
4 PLCS
LINEAR POWER AMPLIFIER
0.45
0.00
4 PLCS
0.23
0.13
0.60
0.24
TYP
1.37 TYP
-B-
2 PLCS
1.50 TYP
2 PLCS
3V, 1.8GHz TO 2.8GHz
0.15 C A
0.15 C B
0.50
Dimensions in mm.
0.10 M
RF5117
0.30
0.18
MAX
12°
1.00
0.85
0.80
0.65
C A B
0.55
0.30
1.65
1.35
http://www.rfmd.com
-C-
SQ.
Fax (336) 664 0454
Tel (336) 664 1233
0.05
0.01
SEATING
PLANE
0.05 C
2-573

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RF5117 Summary of contents

Page 1

... Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117 is designed to maintain linearity over a wide range of supply voltage and power output. Optimum Technology Matching® Applied Si BJT ...

Page 2

... RF5117 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (V ) REG DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity Parameter Min. Overall Frequency Range Maximum Linear Output Power VCC=3.0V VCC=5.0V Linear Efficiency Error Vector Magnitude (EVM) Small Signal Gain ...

Page 3

... PWR SEN The PWR SEN and PWR REF pins can be used in conjunction with an external feedback path to provide an RF power control function for the RF5117. The power control function is based on sampling the RF drive to the final stage of the RF5117. 4 PWR REF Same as pin 3. ...

Page 4

... RF5117 Theory of Operation and Application Information The RF5117 is a two-stage device with a nominal gain of 26dB in the 2.4GHz to 2.5GHz ISM band. The RF5117 is designed primarily for IEEE802.11B/11G WLAN applications where the available supply voltage and current are limited. This amplifier will operate to (and below) the lowest expected voltage made available by a typical PCMCIA slot in a lap- top PC, and will maintain required linearity at decreased supply voltages ...

Page 5

... V Applications Engineering for additional data and guidance in using this feature. The RF5117 has primarily been characterized with a voltage on V operate from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than 2.7VDC, contact RFMD Sales or Applications Engineering for additional data and guidance. ...

Page 6

... RF5117 Evaluation Board Schematic Part is Backside Grounded Ω µstrip 390 Ω C15 390 Ω PWR SENSE C16 REF Notes 149 mils from chip. 2. Pin 2 cut from ground. 3. C11 must be placed as close to chip as possible. ...

Page 7

... Board Thickness 0.031”, Board Material FR-4, Multi-Layer Rev A7 041007 Evaluation Board Layout Board Size 1.5” x 2.0” RF5117 2-579 ...

Page 8

... RF5117 versus OUT -5.0 dBm CC IN 200.0 180.0 160.0 140.0 120.0 100.0 80.0 60.0 40.0 20.0 0.0 1.0 1.5 2 REG1 REG2 802.11B, 5117 proto * RBW 100 kHz * VBW 30 kHz Ref 30 dBm SWT 35 ms Offset 18 IFOVL AVG 10 0 -10 -20 SWP -30 3 -40 ...

Page 9

... V -V versus P REF SENSE 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -15.0 -10.0 -5.0 0.0 5.0 10.0 P OUT Rev A7 041007 OUT 15.0 20.0 25.0 30.0 RF5117 2-581 ...

Page 10

... RF5117 EVM versus P (11g Tuned PA) OUT V = 3.0V, Gain = 23dB CC 140 120 100 Icc(mA)2.4Vreg 80 Icc(mA)2.5Vreg Icc(mA)2.6Vreg Icc(mA)2.7Vreg EVM%2.4Vreg 60 EVM%2.5Vreg EVM%2.6Vreg EVM%2.7Vreg 14 (dBm) OUT I and Gain for 11b Waveform CC in 11g Tuned ...

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