AO4412 Alpha & Omega Semiconductors, AO4412 Datasheet

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AO4412

Manufacturer Part Number
AO4412
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4412
Manufacturer:
AOS/ 万代
Quantity:
20 000
www.DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4412 uses advanced trench technology to
provide excellent R
use has a fast high side switch. The source leads are
separated to allow a Kelvin connection to the source,
which may be used to bypass the source
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.
AO4412
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
A
SOIC-8
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and ultra low gate charge for
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 8.5A
D
S
(V) = 30V
< 26mΩ (V
< 34mΩ (V
Maximum
-55 to 150
Typ
±12
8.5
7.1
2.1
30
60
31
59
16
3
(V
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
Max
40
75
24
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4412 Summary of contents

Page 1

... The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4412L is a Green Product ordering option. AO4412 and AO4412L are electrically identical ...

Page 2

... AO4412 Electrical Characteristics (T Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) www.DataSheet4U.com R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V www.DataSheet4U.com Fig 1: On-Region Characteristics =2. Figure 3: On-Resistance vs. Drain Current and 100 90 80 125° 25° Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...

Page 4

... AO4412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =8. www.DataSheet4U.com Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 0.1 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note =40°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. =15V ...

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