BTS410D2 Siemens Semiconductor Group, BTS410D2 Datasheet - Page 4

• Manufacturer Part Number: BTS410D2
• Description: Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
• Manufacturer: Siemens Semiconductor Group

Parameter and Conditions
at T
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
( max 450 s if V
Overload shutdown current limit
Short circuit shutdown delay after input pos. slope
Output clamp (inductive load switch off)
at V
Short circuit shutdown detection voltage
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
Diagnostic Characteristics
Open load detection current
8
9
10
Semiconductor Group
)
)
min value valid only, if input "low" time exceeds 60 s
V
) Requires 150
(pin 3 to 5)
V
(on-condition)
ON
j
Add I
Short circuit current limit for max. duration of t
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
ON
OUT
= 25 °C, V
> V
= 8 V, T
= V
ST
ON(SC)
, if I
bb
bb
ST
- V
,
j
= 12 V unless otherwise specified
= T
> 0, add I
ON(CL)
ON
resistor in GND connection. The reverse load current through the intrinsic drain-source
jt
> V
(see timing diagrams, page 10)
I
ON(SC)
L
IN
= 40 mA, T
, if V
I
L
= 1 A, T
10
IN
)
)
>5.5 V
T
T
j
j
j
=-40..+150°C:
=-40..+150°C: V
=-40..+150°C:
j
=-40 ..150°C:
T
j
T
=+150°C:
d(SC) max
T
j
j
=-40°C:
=25°C:
4
9
)
,
=450 s, prior to shutdown
I
I
t
V
T
- V
I
Symbol
L(SCp)
L(SCr)
d(SC)
L (OL)
jt
T
ON(CL)
ON(SC)
bb
jt
150
min
61
--
--
--
--
--
--
--
9
4
2
Values
8.5
typ
12
68
10
--
--
--
--
--
--
--
5
BTS 410 D2
max
450
150
23
15
73
75
32
--
--
--
--
--
Unit
mA
°C
A
A
V
V
K
V
s