MTP75N06HD Motorola, MTP75N06HD Datasheet - Page 2

• Manufacturer Part Number: MTP75N06HD
• Description: TMOS POWER FET
• Manufacturer: Motorola

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(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
MTP75N06HD
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–Source On–Resistance
Drain–Source On–Voltage (V GS = 10 Vdc)
Forward Transconductance (V DS = 15 Vdc, I D = 37.5 Adc)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 Adc)
Temperature Coefficient (Negative)
(I D = 75 Adc)
(I D = 37.5 Adc, T J = 125 C)
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
(V GS = 10 Vdc, I D = 37.5 Adc)
C pk =
Characteristic
Max limit – Typ
3 x SIGMA
(I S = 75 Adc, V GS = 0 Vdc, T J = 125 C)
20 Vdc, V DS = 0 V)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 30 Vdc, I D = 75 Adc,
(V DS = 30 Vdc, I D = 75 Adc,
(V DS = 48 Vdc, I D = 75 Adc,
(V DS = 48 Vdc, I D = 75 Adc,
(V DS = 48 Vdc, I D = 75 Adc,
(I S = 75 Adc, V GS = 0 Vdc)
(I S = 75 Adc, V GS = 0 Vdc,
(I S = 75 Adc, V GS = 0 Vdc,
(I S = 75 Adc, V GS = 0 Vdc,
2%.
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
R G = 9.1 )
R G = 9.1 )
G = 9.1 )
(C pk
(C pk
(C pk
2.0) (3)
5.0) (3)
2.0) (3)
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I GSS
I DSS
C oss
Q RR
C rss
C iss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
2.0
60
—
—
—
—
—
—
—
—
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.103
2800
60.4
8.38
0.53
16.3
29.4
0.97
0.88
Typ
928
180
218
125
5.0
3.0
8.3
0.7
3.5
7.5
68
32
18
67
71
31
56
44
12
—
—
3920
1300
Max
100
100
252
306
175
100
4.0
0.9
0.8
1.1
—
—
10
—
10
—
26
94
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
m
nC
nH
nH
Adc
pF
ns
ns
C