FQB20N06L Fairchild Semiconductor, FQB20N06L Datasheet - Page 3

• Manufacturer Part Number: FQB20N06L
• Description: 60V LOGIC N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1500
1000
500
10
10
100
0
10
1
0
80
60
40
20
10
0
-1
-1
0
Top :
Bottom : 3.0 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10.0 V
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
V
10
GS
= 10V
V
GS
V
V
C
C
C
= 5V
DS
DS
oss
iss
rss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
I
D
10
, Drain Current [A]
0
10
0
※ Notes :
1. 250μ s Pulse Test
2. T
30
C
= 25℃
40
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Note : T
gs
gd
ds
1
+ C
+ C
※ Notes :
gd
gd
1. V
2. f = 1 MHz
50
(C
ds
J
GS
10
= 25℃
= shorted)
= 0 V
1
60
10
10
10
10
10
10
-1
-1
1
0
1
0
12
10
0.2
0
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175 ℃
25 ℃
Figure 2. Transfer Characteristics
175 ℃
0.4
Variation vs. Source Current
2
4
0.6
Q
-55 ℃
V
V
and Temperature
G
GS
SD
25 ℃
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
DS
V
= 48V
4
DS
8
0.8
= 30V
1.0
12
6
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
DS
GS
16
= 25V
= 0V
8
D
1.4
= 21A
Rev. A1. May 2001
20
1.6
10