STN4NE03 ST Microelectronics, STN4NE03 Datasheet

no-image

STN4NE03

Manufacturer Part Number
STN4NE03
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN4NE03
Manufacturer:
ST
Quantity:
1 000
Part Number:
STN4NE03
Manufacturer:
ST
Quantity:
20 000
Part Number:
STN4NE03(1186)
Manufacturer:
ST
0
Part Number:
STN4NE03-1186
Manufacturer:
ST
0
Part Number:
STN4NE03-TR
Manufacturer:
ST
0
Part Number:
STN4NE03A
Manufacturer:
ST
0
Part Number:
STN4NE03L
Manufacturer:
ST
Quantity:
20 000
Part Number:
STN4NE03LT4
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size
transistor shows extremely high packing density
for
characteristics and less critical alignment steps
therefore
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
August 1998
ST N4NE03
dv/dt (
Symbol
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
I
V
DM
I
I
V
V
T
P
D
D
DGR
T
DS
GS
stg
(*)
(*)
t ot
TYPE
( )
low
j
1
” strip-based process. The resulting
) Peak Diode Recovery voltage slope
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
St orage Temperature
Max. Operating Junction Temperature
on-resistance,
a
DS(on)
V
30 V
remarkable
= 0.045
DSS
N - CHANNEL 30V - 0.045 - 4A - SOT-223
< 0.06
Parameter
rugged
R
DS(on)
c
GS
= 25
GS
manufacturing
= 20 k )
= 0)
o
C
(*) Limited by package
avalanche
c
c
4 A
= 25
= 100
I
D
o
C
o
STripFET
C
INTERNAL SCHEMATIC DIAGRAM
(1)I
SD
10A, di/dt 300A/ s, V
2
POWER MOSFET
-65 to 150
Value
SOT-223
0.02
150
2.5
2.5
30
30
16
4
6
20
STN4NE03
1
2
DD
3
V
(BR)DSS
, Tj
W/
Uni t
V/ ns
o
o
T
W
V
V
V
A
A
A
C
C
jMAX
o
C
1/8

Related parts for STN4NE03

STN4NE03 Summary of contents

Page 1

... Pulse width limited by safe operating area August 1998 STripFET avalanche INTERNAL SCHEMATIC DIAGRAM = 100 (*) Limited by package (1)I 10A, di/dt 300A STN4NE03 POWER MOSFET SOT-223 Value Uni 2 2 0.02 W/ ...

Page 2

... STN4NE03 THERMAL DATA R Thermal Resistance Junction-PC Board thj -pcb R Thermal Resistance Junction-ambient t hj- amb (Surface Mounted) T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting T ...

Page 3

... GS (see test circuit, figure 5) Test Cond ition di/dt = 100 150 (see test circuit, figure 5) Thermal Impedance STN4NE03 Min. Typ . Max Min. Typ . Max ...

Page 4

... STN4NE03 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STN4NE03 5/8 ...

Page 6

... STN4NE03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. a 2.27 2.3 b 4.57 4.6 c 0.2 0.4 d 0.63 0.65 e1 1 0.67 0 3.5 3.5 L 6.3 6 MAX. MIN. 2.33 89.4 4.63 179.9 0.6 7.9 0.67 24.8 1.7 59.1 0.32 3.1 114.2 0.73 26.4 7.3 263.8 3.7 137.8 6.7 248 STN4NE03 mils TYP. MAX. 90.6 91.7 181.1 182.3 15.7 23.6 25.6 26.4 63 66.9 12.6 118.1 122.1 27.6 28.7 275.6 287.4 137.8 145.7 255.9 263.8 e4 P008B 7/8 ...

Page 8

... STN4NE03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

Related keywords