STW60N10 ST Microelectronics, STW60N10 Datasheet

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STW60N10

Manufacturer Part Number
STW60N10
Description
N-CHANNEL MOSFET
Manufacturer
ST Microelectronics
Datasheet

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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
May 1993
STH60N10
STH60N10FI
STW60N10
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
VERY HIGH CURRENT CAPABILITY
175
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
D M
V
V
V
P
T
DG R
I
I
T
ISO
stg
D S
GS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
100 V
100 V
100 V
V
= 0.02
DSS
< 0.025
< 0.025
< 0.025
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
60 A
36 A
60 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
TO-218
STH/STW60N10
INTERNAL SCHEMATIC DIAGRAM
-65 to 175
1.33
240
200
175
60
42
1
2
1
Value
100
100
3
STH60N10/FI
2
20
3
ISOWATT218
STH60N10FI
STW60N10
TO-247
-65 to 150
4000
0.56
240
150
36
22
70
1
W/
2
Unit
o
o
W
A
V
V
V
A
A
V
C
C
3
o
1/11
C

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STW60N10 Summary of contents

Page 1

... TO-218 INTERNAL SCHEMATIC DIAGRAM STH/STW60N10 = 100 240 o C 200 1.33 -65 to 175 175 STH60N10/FI STW60N10 TO-247 ISOWATT218 Value Unit STH60N10FI 100 V 100 240 0.56 ...

Page 2

... STH60N10/FI STW60N10 THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... Test Conditions di/dt = 100 150 (see test circuit, figure 5) Safe Operating Areas For ISOWATT218 STH60N10/FI STW60N10 Min. Typ. Max. Unit 90 130 ns 270 380 ns 270 A/ s 120 170 Min. Typ. ...

Page 4

... STH60N10/FI STW60N10 Thermal Impedeance For TO-218 and TO-247 Derating Curve For TO-218 and TO-247 Output Characteristics 4/11 Thermal Impedance For ISOWATT218 Derating Curve For ISOWATT218 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature STH60N10/FI STW60N10 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/11 ...

Page 6

... STH60N10/FI STW60N10 Turn-on Current Slope Cross-over Time Accidental Overload Area 6/11 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time STH60N10/FI STW60N10 Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit 7/11 ...

Page 8

... STH60N10/FI STW60N10 TO-247 MECHANICAL DATA DIM. MIN 3.05 C 0.4 D 20.4 e 5.43 E 15.3 L 15.57 L1 3.7 Q 5.3 ØP 3.5 Q ø 8/11 mm TYP. MAX. MIN. 5.3 0.185 2.87 2.5 0.059 1.4 0.039 2.25 3.43 0.120 0.8 0.015 21.18 0.803 5.47 0.213 15.95 0.602 0.613 4.3 0.145 5.84 0.208 3.71 0.137 inch TYP. MAX. 0.208 0.113 0.098 0.055 0.088 0.135 ...

Page 9

... TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. TYP. A 4.7 C 1.17 D 2.5 E 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø Ø STH60N10/FI STW60N10 MAX. MIN. 4.9 0.185 1.37 0.046 0.78 0.019 1.3 0.043 11.1 0.425 15.2 0.578 16.2 – 4.15 0.155 12.2 – 4.1 0.157 inch TYP. MAX. 0.193 0.054 ...

Page 10

... STH60N10/FI STW60N10 ISOWATT218 MECHANICAL DATA DIM. MIN. A 5.35 C 3.3 D 2.9 D1 1.88 E 0.45 F 1.05 G 10.8 H 15.8 L1 20.8 L2 19.1 L3 22.8 L4 40.5 L5 4.85 L6 20.25 M 3 10/11 mm TYP. MAX. MIN. 5.65 0.210 3.8 0.130 3.1 0.114 2.08 0.074 1 0.017 1.25 0.041 11.2 0.425 16.2 0.622 21.2 0.818 19.9 0.752 23.6 0.897 42.5 1.594 5.25 0.190 20.75 0.797 3.7 0.137 2.3 0.082 4 inch TYP ...

Page 11

... SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A STH60N10/FI STW60N10 11/11 ...

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