IPB06CN10NG Infineon Technologies, IPB06CN10NG Datasheet - Page 4

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IPB06CN10NG

Manufacturer Part Number
IPB06CN10NG
Description
Power-Transistor
Manufacturer
Infineon Technologies
Datasheet
www.DataSheet4U.com
Rev. 1.05
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
250
200
150
100
10
10
10
10
10
50
DS
0
-1
3
2
1
0
C
10
); T
0
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
DC
[V]
10
10 ms
100 µs
1
1 ms
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
120
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
0
); V
10
p
0
0.01
)
0.02
-5
0.05
0.2
0.5
0.1
GS
single pulse
≥10 V
p
IPB06CN10N G
10
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPP06CN10N G
IPI06CN10N G
150
10
-1
2006-06-02
200
10
0

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