IPB06CN10NG Infineon Technologies, IPB06CN10NG Datasheet - Page 7

• Manufacturer Part Number: IPB06CN10NG
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 1.05
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
115
110
105
100
10
95
90
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[°C]
[µs]
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
20
IPB06CN10N G
=100 A pulsed
g s
40
Q
Q
gate
g
Q
60
sw
[nC]
Q
g d
IPP06CN10N G
80
IPI06CN10N G
20 V
80 V
100
2006-06-02
50 V
Q
gate
120