TN0106 Supertex Inc, TN0106 Datasheet
TN0106
Manufacturer Part Number
TN0106
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet
1.TN0106.pdf
(4 pages)
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Manufacturer
Quantity
Price
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
†
Ordering Information
MIL visual screening available
Distance of 1.6 mm from case for 10 seconds.
BV
Low threshold — 2.0V max.
High input impedance
Low input capacitance — 50pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
BV
100V
60V
DSS
DGS
/
R
(max)
3.0
3.0
DS(ON)
(min)
I
D(ON)
2A
2A
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
BV
BV
300 C
V
(max)
2.0V
2.0V
GS(th)
20V
DGS
DSS
7-35
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
TN0106N3
TN0110N3
TO-92
Note: See Package Outline section for dimensions.
Order Number / Package
TN0110ND
Die
—
TO-92
S G D
Low Threshold
†
TN0106
TN0110
7
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TN0106 Summary of contents
Page 1
... Package Options BV DSS BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-35 TN0106 TN0110 Low Threshold † Die — TN0110ND TO-92 7 ...
Page 2
... GENERATOR t (OFF d(OFF) F 10% 90% 7-36 TN0106/TN0110 C/W C/W 125 170 0.5A Unit Conditions 1mA 0.5mA mV 1.0mA 20V 0V Max Rating 0V ...
Page 3
... V (volts 10V - 150 25V DS 2.4 3 100 1000 7-37 TN0106/TN0110 Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature TO- ...
Page 4
... C ISS C OSS C RSS 30 40 7-38 On-Resistance vs. Drain Current 5 10V GS GS 4.0 3.0 2.0 1.0 0 1.0 4.0 0 3.0 2.0 I (amperes and R Variation with Temperature (th 0.5mA 1.2 (th) 1 10V, 0.5A DS(ON) 0.8 0.6 0.4 - 100 Gate Drive Dynamic Characteristics 10V DS 8 55pF 40V 50pF 0 0 1.0 2.0 3.0 4.0 Q (nanocoulombs) G TN0106/TN0110 5.0 1.4 1.2 1.0 0.8 0.6 0.4 150 5.0 ...