SFH2801 Siemens Semiconductor Group, SFH2801 Datasheet

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SFH2801

Manufacturer Part Number
SFH2801
Description
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time
Manufacturer
Siemens Semiconductor Group
Datasheet
1.SFH2801.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
SFH2801
Manufacturer:
EVERLIGHT
Quantity:
2 000
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiode with Very Short Switching Time
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Anwendungen
Semiconductor Group
Typ
Type
SFH 2801
Si-PIN Fotodiode
Niedrige Sperrschicht- und Gehäuse-
Kapazitäten
Kurze Schaltzeit
Niedriger Dunkelstrom
Kathode galvanisch getrennt vom Gehäuse
Optischer Sensor mit großer Modulations-
Bandbreite
Datenübertragung bis zu 565 Mbit/s
Bestellnummer
Ordering Code
Q62702-P3018
Stecker/Flansch
Connector/Flange
TO-18, planes Glasfenster, hermetisch dichtes Ge-
häuse, Lötanschlüsse im 2.54 mm Raster (1/10")
TO-18, plane glass window, hermetically sealed pack-
age solder tabs lead spacing 2.54 mm (1/10")
1
Features
Applications
Si-PIN-photodiode
Low junction and low package capacitance
Fast switching times
Low dark current
Cathode electrically isolated from case
Optical sensor of high modulation bandwidth
Data communication up to 565 Mbit/s
SFH 2801
SFH 2801
1998-10-06

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SFH2801 Summary of contents

Page 1

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Si-PIN Fotodiode Niedrige Sperrschicht- und Gehäuse- Kapazitäten Kurze Schaltzeit Niedriger Dunkelstrom Kathode galvanisch ...

Page 2

Grenzwerte Maximum Ratings Bezeichnung Description Sperrspannung Reverse voltage Isolationsspannung zum Gehäuse Isolation voltage to case Betriebs- und Lagertemperaturbereich Operating and storage temperature range Löttemperatur (Wellen-/Tauchlötung) (Lötstelle 2 mm von Bodenplatte entfernt bei Lötzeit Soldering temperature (wave/dip soldering ...

Page 3

Kennwerte = Characteristics (cont’d) Bezeichnung Description Rauschäquivalente Strahlungsleistung Noise equivalent power 850 nm R Nachweisgrenze Detection limit 850 Temperaturkoeffizient von P I Temperature ...

Page 4

Relative spectral sensitivity 100 % S 90 rel 400 600 Dark current = ( ) ...

Page 5

Dark current = ( ) 125 ˚ 100 ˚ ˚ ˚ ˚ ˚ -10 ˚C ...

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