MT18VDDF12872G-40B Micron, MT18VDDF12872G-40B Datasheet - Page 17

• Manufacturer Part Number: MT18VDDF12872G-40B
• Description: 1GB DDR SDRAM RDIMM
• Manufacturer: Micron

Table 14: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
T
A
17
512MB, 1GB (x72, ECC, SR) PC3200
+70°C; V
SYMBOL
t
t
WPRES
t
t
t
t
t
t
WPRE
t
t
t
WPST
t
t
XSNR
XSRD
RPRE
RPST
t
REFC
WTR
RCD
RRD
REFI
VTD
t
WR
na
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
184-PIN DDR SDRAM RDIMM
= V
DD
Q = +2.6V ±0.1V
MIN
0.90
0.40
0.25
0.40
200
15
15
10
15
70
0
2
0
t
QH -
-40B
t
DQSQ
MAX
70.30
1.10
0.60
0.60
7.81
©2004 Micron Technology, Inc. All rights reserved.
UNITS
t
t
t
t
t
t
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
NOTES
18, 19
38
38
17
22
21
21