BF1205 Philips Semiconductors, BF1205 Datasheet

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BF1205

Manufacturer Part Number
BF1205
Description
Dual N-channel dual gate MOS-FET
Manufacturer
Philips Semiconductors
Datasheet

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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1205
Dual N-channel dual gate
MOS-FET
Product specification
2003 Sep 30

Related parts for BF1205

BF1205 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BF1205 Dual N-channel dual gate MOS-FET Product specification MBD128 2003 Sep 30 ...

Page 2

... V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected ...

Page 3

... MHz amp 800 MHz amp. a: input level for AGC amp. b: input level for AGC CAUTION CONDITIONS T 102 C; note s PARAMETER 3 Product specification BF1205 MIN. TYP. MAX. UNIT 200 1.8 2 ...

Page 4

... 0.5 S- 100 A 0.3 G2 100 A 0 G1-S DS Product specification BF1205 MAX. UNIT 1 ...

Page 5

... V GG (V) (a 180 (a 150 (a 120 ( ( amplifier a is OFF; amplifier amplifier a is ON; amplifier b is OFF. GG Fig.4 Functional diagram Product specification BF1205 d ( (b) MGX431 ...

Page 6

... MHz; note 2 w unw ( ( G1 Product specification MIN. TYP 1.8 3.3 0. S(opt) L(opt S(opt S(opt 1.1 S(opt) 1.2 S(opt 102 BF1205 MAX. UNIT 1 ...

Page 7

... Fig.6 7 Product specification (mA (a) = 1.4 V. ( G1-S G1-S (a) = 1.3 V. (6) V (a) = 0.9 V. G1-S G1-S (a) = 1.2 V. (7) V (a) = 0.8 V. G1-S G1-S (a) = 1 G2-S G1 Output characteristics; typical values; amplifier a. BF1205 MGX433 (1) (2) (3) (4) (5) (6) ( (V) ...

Page 8

... Fig (a) ( G2-S DS G1-S Drain current as a function of internal G1 current (current in pin drain (b) if MOS-FET (b) is switched off); typical values; amplifier a. Product specification BF1205 MGX435 ( ( ...

Page 9

... unw Fig.10 Unwanted voltage for 1% cross-modulation 9 Product specification 120 110 100 gain reduction (dB MHz MHz see Fig.13. amb as a function of gain reduction; typical values; amplifier a. BF1205 MGX437 60 ...

Page 10

... Fig.13 Cross-modulation test set-up for amplifier a. 10 Product specification gain reduction (dB MHz G1-S reduction; typical values; amplifier ( 4 2 (b) L2 2 (b) MGX440 5 V BF1205 MGX439 amb ...

Page 11

... G2-S DS G1 mA. D Fig.17 Output admittance as a function of frequency; typical values; amplifier a. Product specification BF1205 MGX442 (deg (MHz) ( MGX444 (MHz) ( ...

Page 12

... C amb (deg) 16.16 32.7 MIN. TYP 2.0 3.3 0. S(opt) ; note 1 L(opt S(opt) ; note S(opt) ; note 1.3 S(opt) 1.4 S(opt) BF1205 s 22 ANGLE (deg) 1.38 2.83 5.62 8.40 11.15 13.88 16.65 19.35 22.08 24.87 27. 31.18 29.74 MAX. UNIT 1.9 dB 2.1 dB ...

Page 13

... Product specification MIN. TYP 100 105 (b) = 1.4 V. ( G1-S G1-S (b) = 1.3 V. (6) V (b) = 0.9 V. G1-S G1-S (b) = 1.2 V. (7) V (b) = 0.8 V. G1-S G1-S (b) = 1 G1-S j amplifier b. BF1205 MAX. UNIT MGX446 (1) (2) (3) (4) (5) (6) ( (V) ...

Page 14

... DS Fig.21 Forward transfer admittance as a function 14 Product specification (mS (4) V G2-S G2-S = 3.5 V. (5) V G2-S G2 G2 drain current; typical values; amplifier b. BF1205 MGX448 (1) (2) (3) (4) ( (mA ...

Page 15

... I D ( G2 (b) = 150 k (connected Fig.23 Drain current as a function of gate 1 supply voltage (V ); typical values; amplifier b. GG Product specification BF1205 MGX450 (V) ( see Fig.4. GG ...

Page 16

... Fig.25 Drain current as a function of gate 2 16 Product specification (mA 5 4 G1-S j (b) = 150 k (connected see Fig.4. GG voltage; typical values; amplifier b. BF1205 MGX452 (1) (2) (3) (4) ( G2-S (V) ...

Page 17

... Fig.27 Unwanted voltage for 1% cross-modulation 17 Product specification 120 110 100 gain reduction (dB G1-S (b) = 150 k (connected MHz MHz see Fig.30. amb as a function of gain reduction; typical values; amplifier b. BF1205 MGX454 60 ...

Page 18

... amb Fig.29 Drain current as a function of gain 18 Product specification gain reduction (dB G1-S (b) = 150 k (connected MHz see Fig.30. reduction; typical values; amplifier b. BF1205 MGX456 60 ...

Page 19

... MDB813 ( G2-S DS G1 mA. D Fig.32 Forward transfer admittance and phase as a function of frequency; typical values; amplifier b. Product specification BF1205 MGX458 (deg (MHz) ( ...

Page 20

... V; G1 ( G2-S DS G1 mA. D Fig.34 Output admittance as a function of frequency; typical values; amplifier b. Product specification BF1205 MGX460 (MHz) ( ...

Page 21

... G1-S F MIN (dB) (ratio) 1.3 0.662 1.4 0.578 21 Product specification = 25 C amb s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 85.43 0.991 86.06 0.989 84.25 0.988 82.63 0.986 81.35 0.983 79.46 0.973 78.57 0.975 77.88 0.972 76.72 0.968 76.55 0.964 76.67 0.959 = 25 C amb F MIN (dB) (deg) 16.76 33.97 BF1205 s 22 ANGLE (deg) 1.56 3.11 6.16 9.17 12.17 15.16 18.15 21.07 24.08 27.03 30. 31.55 30.53 ...

Page 22

... VERSION IEC SOT363 2003 Sep scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC- detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION Product specification BF1205 SOT363 ISSUE DATE 97-02-28 ...

Page 23

... Product specification BF1205 DEFINITION These products are not Philips Semiconductors ...

Page 24

... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...

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