BF545C Philips Semiconductors, BF545C Datasheet

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BF545C

Manufacturer Part Number
BF545C
Description
N-channel silicon junction field-effect transistors
Manufacturer
Philips Semiconductors
Datasheets

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1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
Table 1:
Symbol Parameter
V
V
I
P
DSS
y
DS
GSoff
tot
fs
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
Impedance converters in e.g. electret microphones and infra-red detectors
VHF amplifiers in oscillators and mixers.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
drain-source voltage
gate-source cut-off
voltage
drain current
total power dissipation
forward transfer
admittance
Quick reference data
Conditions
I
V
T
V
D
amb
GS
GS
BF545A
BF545B
BF545C
= 1 A; V
= 0 V; V
= 0 V; V
25 C
DS
DS
DS
= 15 V
= 15 V
= 15 V
Min
-
2
6
12
-
3
Product data sheet
0.4
Typ
-
-
-
-
-
-
-
Max
6.5
15
25
250
6.5
30
7.8
Unit
V
V
mA
mA
mA
mW
mS

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