SHF-0186K ETC, SHF-0186K Datasheet
SHF-0186K
Manufacturer Part Number
SHF-0186K
Description
DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET
Manufacturer
ETC
Datasheet
1.SHF-0186K.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SHF-0186K
Manufacturer:
MAXIM
Quantity:
1 200
Product Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186K is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
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SHF-0186K
DC-3 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Product Features
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Technology
Patented AlGaAs/GaAs Heterostructure FET
High Drain Efficiency: Up to 46% at Class AB
Analog and Digital Wireless System
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AN-020 Contains detailed application circuits
+28 dBm P1dB Typical
+40 dBm Output IP3 Typical
17 dB Gain at 900 MHz (Application circuit)
15 dB Gain at 1900 MHz (Application circuit)
Cellular PCS, CDPD, Wireless Data, Pagers
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SHF-0186K Summary of contents
Page 1
... HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V and 100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements ...
Page 2
... Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.stanfordmicro.com or call your local sales representative. 522 Almanor Ave., Sunnyvale, CA 94085 SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET Absolute Maximum Ratings P a ...
Page 3
... Note: S-parameters are de-embedded to the device leads. The data represents typical performace of the device. Measured s-parameter data files can be downloaded using a link found on the SHF-0186K device page from our web site at www.stanfordmicro.com. 522 Almanor Ave., Sunnyvale, CA 94085 SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET ...
Page 4
... & 522 Almanor Ave., Sunnyvale, CA 94085 SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET Part Number Ordering Information ...