NE5500179A NEC, NE5500179A Datasheet - Page 6
NE5500179A
Manufacturer Part Number
NE5500179A
Description
SILICON POWER MOS FET
Manufacturer
NEC
Datasheet
1.NE5500179A.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE5500179A-T1
Manufacturer:
FUJITSU
Quantity:
201
6
Remark The graphs indicate nominal characteristics.
30
25
20
15
10
5
0.0
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
V
f = 2.45 GHz
P
DS
in
= 18 dBm
= 3.0 V
Gate to Source Voltage V
1.0
2.0
P
I
out
D
3.0
GS
(V)
Data Sheet PU10118EJ01V1DS
4.0
500
400
300
200
100
0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
50
0
V
f = 2.45 GHz
P
DS
in
= 18 dBm
= 3.0 V
Gate to Source Voltage V
1.0
2.0
add
d
3.0
GS
NE5500179A
(V)
4.0