BLF522 Philips Semiconductors, BLF522 Datasheet - Page 3

• Manufacturer Part Number: BLF522
• Description: UHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
September 1992
V
I
P
T
T
R
R
handbook, halfpage
D
SYMBOL
V
stg
i
SYMBOL
DS
tot
th j-mb
th mb-h
UHF power MOS transistor
(1) Current in this area may be limited by R
(2) T
GS
(A)
0.1
I D
mb
5
1
= 25 C.
1
thermal resistance from junction to mounting
base
thermal resistance from mounting base to
heatsink
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DS(on)
.
MRA990
100
3
up to T
handbook, halfpage
T
T
mb
mb
(1) Continuous operation.
(2) Short-time operation during mismatch.
P tot
(W)
= 25 C; P
= 25 C; P
mb
CONDITIONS
35
30
25
20
15
10
Fig.3 Power/temperature derating curves.
CONDITIONS
5
0
= 25 C
0
20
tot
tot
= 20 W
= 20 W
40
(2)
(1)
60
MIN.
65
80
Product specification
RESISTANCE
100
THERMAL
T h (
40
20
1.8
20
150
200
8.8 K/W
0.4 K/W
MAX.
o
BLF522
MRA427
C)
120
V
V
A
W
C
C
UNIT